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AON7422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 32A < 4.6m < 6m
100% UIS Tested 100% Rg Tested
DFN 3x3 Top View Bottom View
D
Top View S S S G D D D D
Pin 1
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C
Maximum 30 20 32 25 150 15 11 47 110 35 14 1.7 1 -55 to 150
Units V V A
TC=25C TC=100C TA=25C TA=70C
ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
Symbol
t 10s Steady-State Steady-State
RJA RJC
Typ 30 60 3
Max 40 75 3.5
Units C/W C/W C/W
Rev 0: February 2009
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Page 1 of 6
AON7422
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 260 150 0.5 35 VGS=10V, VDS=15V, ID=20A 16 5.6 5.4 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 9 21 Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.2 150 3.8 5.3 4.7 100 0.68 1 40 2400 370 245 1 44 20 7 9 8 9 36 9 12 26 14 31 2900 480 340 1.5 53 24 8.4 12.6 4.6 6.4 6 1.75 Min 30 1 5 100 2.3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
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AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150 120 90 60 30 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance 1.6 VGS=10V ID=20A VGS=3V 100 10V 6V 4V 3.5V ID(A) 80 60 40 20 0 1 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C VDS=5V
ID (A)
5 RDS(ON) (m)
VGS=4.5V
1.4
4
1.2
3
VGS=10V
1
17 5 2 10 VGS=4.5V
ID=20A
2 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10
0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
12 ID=20A 10 RDS(ON) (m) 8 125C 6 4 25C 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
1.0E+02 1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
40
Rev 0: February 2009
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Page 3 of 6
AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A Capacitance (pF) 3500 3000 Ciss 2500 2000 1500 1000 500 0 0 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 50 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
8
VGS (Volts)
6
4
2
Coss
0
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
200 160 Power (W) 120 80 40 0 0.0001 TJ(Max)=150C TC=25C
RDS(ON) limited DC
10s 100s 1ms 10ms
17 5 2 10
TJ(Max)=150C TC=25C
0.1 1 VDS (Volts) 10 100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2009
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Page 4 of 6
AON7422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140 IAR (A) Peak Avalanche Current 120 100 80 60 40 20 0 0.000001 TA=125C TA=150C TA=100C TA=25C Power Dissipation (W) 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F)
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
35 30 Current rating ID(A) 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F)
10000
TA=25C
1000
100
17 5 2 10
Power (W)
10
1 0.00001
0.001
0.1
10
0
1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse 0.001 0.00001 Ton 1 10
0.01
T 100 1000
0.0001
0.001
0.01
0.1
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2009
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Page 5 of 6
AON7422
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & W aveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) ton tr t d(off) toff tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR = 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Rev 0: February 2009
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Page 6 of 6

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